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Mobile Phone Patent Abstract
There is provided a power rate enhancement circuit for a power amplifier
in a dual mode mobile phone including an RF power amplifier for
amplifying an RF input signal, a duplexer connected to an antenna,
and an isolator connected to the duplexer. The power enhancement
circuit also comprises: a CDMA matching circuit connected to an
output end of the RF power amplifier, for matching an output impedance
of the RF power amplifier in a CDMA mode of operation; an AMPS matching
circuit connected to the output end of the RF power amplifier, for
matching the output impedance of the RF power amplifier in an AMPS
mode of operation; and an RF switch for selecting the CDMA matching
circuit or the AMPS matching circuit according to a mode control
signal. The CDMA matching circuit comprises an inductor connected
between the output end of the RF power amplifier and the isolator.
The AMPS matching circuit comprises a capacitor connected between
the RF switch and a contact point formed between the inductor and
the isolator.
Mobile Phone Patent Claims
What is claimed is:
1. A power rate enhancement circuit for a power amplifier in a
dual mode mobile phone including an RF (Radio Frequency) power amplifier
for amplifying an RF input signal, a duplexer connected to an antenna,
and an isolator connected to the duplexer, the circuit comprising:
a CDMA (Code Division Multiple Access) matching circuit connected
to an output end of the RF power amplifier, for matching an output
impedance of the RF power amplifier in a CDMA mode of operation;
an AMPS (Advanced Mobile Phone Service) matching circuit connected
to the output end of the RF power amplifier, for matching the output
impedance of the RF power amplifier in an AMPS mode of operation;
and an RF switch for selecting one of the CDMA matching circuit
or the AMPS matching circuit, according to a mode control signal,
wherein the CDMA matching circuit comprises an inductor connected
between the output end of the RF power amplifier and an isolator,
and the AMPS matching circuit comprises a capacitor connected between
the RF switch and a contact point formed between the inductor and
the isolator.
2. The power rate enhancement circuit as claimed in claim 1, wherein
the RF switch is a mechanical switch.
3. The power rate enhancement circuit as claimed in claim 1, wherein
the RF switch is a field effect transistor.
4. The power rate enhancement circuit as claimed in claim 1, wherein
the RF switch is a diode.
5. A power rate enhancement circuit for a power amplifier in a
dual mode mobile phone including an RF power amplifier for amplifying
an RF input signal, a duplexer connected to an antenna, and an isolator
connected to the duplexer, the circuit comprising: an inductor connected
between an output end of the RF amplifier and the isolator, for
matching an output impedance of the RF power amplifier in a CDMA
mode of operation; a capacitor connected between an RF switch and
a contact point formed between the inductor and the isolator, for
matching the output impedance of the RF power amplifier in an AMPS
mode of operation; and the RF switch for selecting one of the inductor
or the capacitor, according to a mode control signal.
6. The power rate enhancement circuit as claimed in claim 5, wherein
the RF switch is a mechanical switch.
7. The power rate enhancement circuit as claimed in claim 5, wherein
the RF switch is a field effect transistor.
8. The power rate enhancement circuit as claimed in claim 5, wherein
the RF switch is a diode.
Mobile Phone Patent Description
PRIORITY
This application claims priority to an application entitled "Power
Rate Enhancement Circuit for RF Power Amplifier in a Dual Mode Mobile
Phone" filed in the Korean Industrial Property Office on Jan.
20, 2001 and assigned Ser. No. 2001-3387, the contents of which
are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to a dual mode mobile phone,
and in particular, to a circuit for maximizing a power rate of an
RF (Radio Frequency) power amplifier.
2. Description of the Related Art
In a mobile phone, an RF power amplifier consumes much more power
than other elements. Therefore, the RF power amplifier chiefly causes
a reduction in battery run-time and it generates heat.
In addition, in dual mode phones, when the mobile phone switches
its operation mode from an analog communication mode to a digital
communication mode, the RF power amplifier is required to have high
linearity.
The increase in linearity of the RF power amplifier causes a decrease
in power rate, thereby causing a reduced battery run-time problem
and a heat generation problem in the mobile phone.
In general, a dual mode mobile phone supporting both a CDMA (Code
Division Multiple Access) mode (or a digital communication mode)
and an AMPS (Advanced Mobile Phone Service) mode (or an analog communication
mode) shares one RF power amplifier for the two modes. That is,
an RF power amplifier for the CDMA mode is also used in the AMPS
mode, to cut down the cost and the size of the mobile phone. However,
when used in the AMPS mode, the RF power amplifier for the CDMA
mode has a lower power rate, as compared with the RF power amplifier
for the AMPS mode. Actually, the RF power amplifier for the CDMA
mode has a power rate of about 30%, while the RF power amplifier
for the AMPS mode has a power rate of over 50%. However, when used
in the AMPS mode, the RF power amplifier for the CDMA mode has a
power rate of 35-40% at most. This great reduction in efficiency
of the RF power amplifier during AMPS mode is required in the prior
art if reduction on cost and size is desired.
In addition, RF power amplifiers are classified according to the
modulation mode. An RF power amplifier with a Model No. RI23124,
though it is an RF power amplifier for the CDMA mode, can also be
used in the AMPS mode. This RF power amplifier has an output power
of 4 dBm to 30 dBm in the AMPS mode, whereas it has an output power
of -50 dBm to 30 dBm in the CDMA mode. Further, the RF power amplifier
discontinuously operates at full, 1/2, 1/4 or 1/8 rate, according
to the traffic conditions. Therefore, when operating in the AMPS
mode, this RF power amplifier generates a great deal of heat and,
thereby consumes a great deal of power.
However, the RF power amplifier does not require a high level of
linearity when operating in the AMPS mode, as compared with the
case when operating in the CDMA mode. Therefore, when it is possible
to increase the power rate to some extent it is preferable to share
the RF power amplifier between the AMPS and CDMA operating modes.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide
a power rate enhancement circuit for maximizing a power rate of
an RF power amplifier, which is utilized in two different operation
modes in a dual mode mobile phone.
To achieve the above and other objects, there is provided a power
rate enhancement circuit for a power amplifier in a dual mode mobile
phone including an RF power amplifier for amplifying an RF input
signal, a duplexer connected to an antenna, and an isolator connected
to the duplexer. The power enhancement circuit also comprises: a
CDMA matching circuit connected to an output end of the RF power
amplifier, for matching an output impedance of the RF power amplifier
in a CDMA mode of operation; an AMPS matching circuit connected
to the output end of the RF power amplifier, for matching the output
impedance of the RF power amplifier in an AMPS mode of operation;
and an RF switch for selecting the CDMA matching circuit, and the
AMPS matching circuit, according to a mode control signal.
Preferably, the CDMA matching circuit comprises an inductor connected
between the output end of the RF power amplifier and the isolator.
Preferably, the AMPS matching circuit comprises a capacitor connected
between the RF switch and a contact point formed between the inductor
and the isolator.
BRIEF DESCRIPTION OF THE DRAWINGS
The above and other objects, features and advantages of the present
invention will become more apparent from the following detailed
description when taken in conjunction with the accompanying drawings
in which:
FIG. 1 is a block diagram illustrating a power rate enhancement
circuit for an RF power amplifier in a dual mode mobile phone, according
to an embodiment of the present invention;
FIG. 2 is a detailed circuit diagram of the circuit of FIG. 1;
FIG. 3 is a diagram illustrating a Smith chart representing an
ACPR (Adjacent Channel Power Ratio) characteristic out of load full
data of an RF power amplifier, specifically Model No. RI23124; and
FIG. 4 is a diagram illustrating a Smith chart representing a power
rate characteristic out of the load full data of the RF power amplifier
Model No. RI23124.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
A preferred embodiment of the present invention will be described
herein below with reference to the accompanying drawings. In the
following description, well-known functions or constructions are
not described in detail since they would obscure the invention in
unnecessary detail.
The characteristics of an RF power amplifier chiefly depend on
the neighboring circuits. Here, the "neighboring circuits"
refer to a power supply circuit and an input/output impedance circuit.
That is, the characteristics of the RF power amplifier chiefly depend
on the input/output impedance. In addition, the power rate and the
linearity characteristic chiefly depend on a matching state of the
output impedance.
In general, high linearity-oriented matching is different from
high power rate-oriented matching.
Therefore, by performing high linearity-oriented matching in the
CDMA mode and high power rate-oriented matching in the AMPS mode,
the mobile phone can optimally operate, no matter which operation
mode is being utilized by the mobile phone operating, whether it
is in the CDMA mode or the AMPS mode, thereby making it possible
to extend the battery run-time of the mobile phone and reduce the
heat it generates. A power rate enhancement circuit, according to
an embodiment of the present invention, enhances the power rate
in the AMPS mode by properly controlling an output impedance of
the RF power amplifier.
FIG. 1 illustrates a power rate enhancement circuit for an RF power
amplifier in a dual mode mobile phone, according to an embodiment
of the present invention.
Referring to FIG. 1, the power rate enhancement circuit comprises:
an RF power amplifier 10, a CDMA matching circuit 20, an AMPS matching
circuit 30, an RF switch (or SPDT (Single-Pole-Double-Throw) switch)
40, an isolator 50, a duplexer 60 and an antenna 70. The RF switch
40 can be implemented by a mechanical switch, a field effect transistor
(FET) or a diode. The elements 10, 50, 60 and 70 constitute the
general transmission circuit.
As illustrated, the CDMA matching circuit 20 and the AMPS matching
circuit 30, both having high linearity, are connected between the
RF power amplifier 10 and the RF switch 40. The RF switch 40 is
switched, according to a mode control signal generated by a controller
of the mobile telephone.
The dual mode mobile phone with the novel power rate enhancement
circuit selects the matching circuit having high linearity in the
CDMA mode, thus maintaining the high linearity for a CDMA input
signal. Further, the dual mode mobile phone with the novel power
rate enhancement circuit selects the matching circuit, having a
high power rate in the AMPS mode, thus maintaining the high power
rate for an AMPS input signal.
Since it is allowable that the linearity in the AMPS mode is lower
than that in the CDMA mode, the circuit can enhance the power rate
without distortion of the linearity characteristic.
The CDMA RF signal and the AMPS RF signal have different characteristics.
Now, a solution of the heat generation problem will be described
separately for the AMPS mode and the CDMA mode.
FIG. 2 illustrates the detailed structure of the power rate enhancement
circuit of FIG. 1. An RF power amplifier, Model No. RI23124 by Conexant,
USA, is designed to maximize the amount of power rate it receives
from the input of a CDMA signal while minimizing distortion of the
CDMA signal. However, this RF power amplifier has a lower power
rate than that of an RF power amplifier for the AMPS mode.
Those of ordinary skill in the art recognize that any RF power
amplifier, which utilizes the components recited in FIG. 1 may be
utilized by this invention. To make up for this shortcoming, the
invention varies a load impedance of the RF power amplifier. In
other words, since the frequency modulation (FM) does not require
so much high linearity of the RF power amplifier, the invention
maximizes the power rate of the RF power amplifier.
FIGS. 3 and 4 illustrate Smith charts representing load full data
of the RF power amplifier RI23124.
Referring to FIG. 3, the maximum ACPR characteristic appears in
the first quadrant. Referring to FIG. 4, the maximum power rate
characteristic appears in the third quadrant. A quadrant is defined
when a horizontal line and a vertical line are drawn through a medium
point depicted in the drawings by a triangle.
Turning back to FIG. 2, when the CDMA mode is selected, the RF
switch 40 is turned OFF, so that the load impedance of the RF power
amplifier 10 is located in the first quadrant due to an inductor
25. At this point, it is possible to satisfy the ACPR characteristic
by properly controlling an inductance of the inductor 25. Capacitor
35 is connected between RF switch 40 and a contact point formed
between the output end of the RF amplifier 10 and Isolator 50, for
matching the output impedance of the RF power amplifier in an AMPS
mode of operation.
On the contrary, when the AMPS mode is selected, the RF switch
40 is turned ON, so that the load impedance of the RF power amplifier
10 is located in the third quadrant, thus increasing the power rate.
As shown in Table 1 below, when the load impedance of the RF power
amplifier is 50 .OMEGA. (i.e., when the isolator 50 is directly
connected to the RF power amplifier 10), the RF power amplifier
consumes a current of 574 mA. However, when the load impedance is
so modified as to increase the power rate by 5%, the RF power amplifier
consumes a current of 509 mA. That is, it is possible to reduce
the current by 65 mA (234 mW) by simply modifying the load impedance
to increase the power rate by 5%.
TABLE 1 Pout Current Power Rate Remarks Load of 50.OMEGA. 29.171
574 mA 40% Measured Value Load Modified 29 509 mA 45% Measured Value
If the loss of the isolator 50 and the duplexer 60 is 2.5 dBm when
the output power Pout of the power amplifier is 29 dBm, the final
output power becomes 26.5 dBm. This is equivalent to that of AMPS
PL2 (Power Level 2).
As described above, the dual mode mobile phone with the power rate
enhancement circuit, according to the present invention, satisfies
the CDMA and AMPS mode characteristics using only a single RF power
amplifier without a separate RF power amplifier for the AMPS mode,
thereby reducing the power consumption. As a result, the battery
run-time of the dual mode mobile phone is extended and the power
rate is increased. Further, the heat generated by the dual mode
mobile phone RF power is reduced.
While the invention has been shown and described with reference
to a certain preferred embodiment thereof, it will be understood
by those skilled in the art that various changes in form and details
may be made therein without departing from the spirit and scope
of the invention as defined by the appended claims.
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